Fig. 7From: Alternative Strategy to Reduce Surface Recombination for InGaN/GaN Micro-light-Emitting Diodes—Thinning the Quantum Barriers to Manage the Current SpreadingNumerically calculated hole concentration profiles in the MQW region (a) in the center, (b) at the edge of the mesas for μLEDs I, II, and III, respectively. Data are calculated at the current density of 40 A/cm2. Inset figures show the position along which the hole concentration profiles are capturedBack to article page