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Fig. 3 | Nanoscale Research Letters

Fig. 3

From: Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction

Fig. 3

Electric field distribution along the AlGaN/GaN channel heterointerface by TCAD simulation. The Al fraction is defined as 0.25. The net acceptor (deep level) density in the buffer layer is set to be 1.5 × 1016 cm−3 and the energy level is 0.45 eV below the conduction band minimum. The acceptor density of the AlGaN/GaN interface is set to be 6 × 1012 cm−3 and the energy level is 0.23 eV below the conduction band minimum

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