Fig. 3From: Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-HeterojunctionElectric field distribution along the AlGaN/GaN channel heterointerface by TCAD simulation. The Al fraction is defined as 0.25. The net acceptor (deep level) density in the buffer layer is set to be 1.5 × 1016 cm−3 and the energy level is 0.45 eV below the conduction band minimum. The acceptor density of the AlGaN/GaN interface is set to be 6 × 1012 cm−3 and the energy level is 0.23 eV below the conduction band minimumBack to article page