Fig. 6From: Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunctiona AFM morphology of the trench after ICP etching. b Influence of etch depth on ohmic contact resistance by TLM test. c Contact resistance as a function of annealing temperature with the trench depth from 50 to 55 nm. The annealing time was 35 sBack to article page