Fig. 7From: Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-HeterojunctionStatistical plots of a turn-on voltage, b forward voltage, and c breakdown voltage extracted from 72 SBDs with LAC of 7, 9, and 11 μm fabricated in 3 separate process runs. d Distribution of VON for 72 devicesBack to article page