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Table 2 Carrier concentration, mobility, and resistivity of Hall effect measurements and root mean square (rms) surface roughness estimated by AFM images of specimens

From: Co-dosing Ozone and Deionized Water as Oxidant Precursors of ZnO Thin Film Growth by Atomic Layer Deposition

Sample

Carrier concentration (cm−3)

Mobility (cm2/Vs)

Resistivity (Ωcm)

Dnr1

EA1 (meV)

Dnr2

EA2 (meV)

Roughness (nm)

A

3.4 × 1019

19

9.7 × 10−3

6.26

3.6

132.7

22.3

1.92

B

4.6 × 1017

1.1

1.2 × 101

4.3

3.4

153.6

25.6

4.30

C

9.4 × 1015

6.1

1.1 × 102

5.29

3.5

110.8

21.7

2.18

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