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Fig. 3 | Nanoscale Research Letters

Fig. 3

From: Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure

Fig. 3

The direct current (DC) test of the HZO/MoS2 FeFET when drain voltage (VDS) is 0.5 V. a The comparison between transfer curves with 6 V and 6.5 V as maximum of the back gate voltage. b Enlarged view of transfer curves at 0 to −2 V interval of VGS,range = (−3, 3 V). Point subthreshold slope (SS) as a function of drain current (IDS) of the HZO/MoS2 FeFET is (b) inset. The device exhibits SSFor = 51.2 mV/dec

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