Fig. 4From: Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate StructureMemory performances of the HZO/MoS2 FeFET under P/E pulses. a Extracted MWs (MWs) under P/E pulses with ± 3 V, ± 4 V, ± 5 V, ± 5.5 V, and ± 6 V heights. b Endurance measurements under P/E pulse conditions. c Retention characteristic of the HZO/MoS2 FeFET. d Endurance of the HZO/MoS2 FeFET for 103 cycles under the P/E pulses with ± 3 V heightsBack to article page