Table 1 Comparison among the figure of merits of ferroelectric FETs based on MoS2.
From: Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure
MoS2 (thickness) | Ferroelectric layer (thickness) | Control gate (position) | Pr (μC/cm2) | Ec (MV/cm) | Hysteresis | MW [V] | Working voltage [V] | Endurance [Cycles] | Retention [s] | Ref. |
|---|---|---|---|---|---|---|---|---|---|---|
few layers | HZO (6 nm) | P+ Si (back) | 1.1 | 1.62 | Counter-clockwise | 0.3 | ± 5.5 | 103 | 104 | This work |
3 L | PZT (100 nm) | SrRuO3 (back) | 65 | 2 | Counter-clockwise | 20 | (−10, 30) | — | — | [12] |
4 L | PZT (260 nm) | Pt (back) | 56.03 | 8 | Clockwise | 2.5 | ± 4 | [13] | ||
3 L | P(VDF-TrFE) (≈ 300 nm) | Al (top) | 7 | 0.75 | Counter-clockwise | 25 | ± 40 | — | — | [14] |
5 L | P(VDF-TrFE) (220 nm) | Au (top) | 6.5 | 0.55 | Counter-clockwise | 16 | ± 26 | — | 600 | [15] |
1 L | P(VDF-TrFE) (200 nm) | Al (top) | 10 | 0.5 | Counter-clockwise | 15 | ± 20 | — | 103 | [16] |
Several layers | P(VDF-TrFE) (150 nm) | Pt/Si (back) | 8 | 0.6 | Counter-clockwise | 16 | ± 26 | 103 | 3 × 104 | [17] |
1 L | Al doped HfO2 (16 nm) | P+ Si (back) | 3 | 1.5 | Counter-clockwise | 0.125 | ± 10 | 2 × 104 | — | [18] |
3 L | P(VDF-TrFE) (100 nm) | P+ Si (back) | 40 | 0.3 | Clockwise | 4.5 | ± 6 | 500 | 104 | [19] |