Skip to main content

Table 1 Comparison among the figure of merits of ferroelectric FETs based on MoS2.

From: Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure

MoS2 (thickness) Ferroelectric layer (thickness) Control gate (position) Pr (μC/cm2) Ec (MV/cm) Hysteresis MW [V] Working voltage [V] Endurance [Cycles] Retention [s] Ref.
few layers HZO (6 nm) P+ Si (back) 1.1 1.62 Counter-clockwise 0.3 ± 5.5 103 104 This work
3 L PZT (100 nm) SrRuO3 (back) 65 2 Counter-clockwise 20 (−10, 30) [12]
4 L PZT (260 nm) Pt (back) 56.03 8 Clockwise 2.5 ± 4    [13]
3 L P(VDF-TrFE) ( 300 nm) Al (top) 7 0.75 Counter-clockwise 25 ± 40 [14]
5 L P(VDF-TrFE) (220 nm) Au (top) 6.5 0.55 Counter-clockwise 16 ± 26 600 [15]
1 L P(VDF-TrFE) (200 nm) Al (top) 10 0.5 Counter-clockwise 15 ± 20 103 [16]
Several layers P(VDF-TrFE) (150 nm) Pt/Si (back) 8 0.6 Counter-clockwise 16 ± 26 103 3 × 104 [17]
1 L Al doped HfO2 (16 nm) P+ Si (back) 3 1.5 Counter-clockwise 0.125 ± 10 2 × 104 [18]
3 L P(VDF-TrFE) (100 nm) P+ Si (back) 40 0.3 Clockwise 4.5 ± 6 500 104 [19]