Fig. 4From: Electrical and Optical Properties of Nb-doped SrSnO3 Epitaxial Films Deposited by Pulsed Laser DepositionResistivity, carrier concentration, and mobility of the SSNO films as a function of (a) oxygen pressure from 20 to 0.03 Pa and (b) substrate temperature from 660 to 820 °C measured at room temperatureBack to article page