Fig. 1From: Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar CellsThe SEM top views of a n-GaN (sample A), p-GaN/InGaN/n-GaN with the In and Ga atoms impinged cycle times of b 20 s/30 s (sample B) and c 30 s/30 s (sample C). The SEM cross-section views of d sample A, e sample B, and f sample C. g A schematic diagram of p-GaN/InGaN/n-GaN nanorod structureBack to article page