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Fig. 2 | Nanoscale Research Letters

Fig. 2

From: Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar Cells

Fig. 2

a HR-XRD spectra for the theta-2theta scans. The indium content of the InGaN material was estimated to be 8% for sample B (red curve) and 11% for sample C (blue curve) by using Vegard’s law. b The dislocation-free nitride nanorod TEM image and SAED pattern of n-GaN region. The single nanorod schematic diagram beneath the image obeys the structural relative scale. The atomic-resolution TEM images of c n-GaN in area 1 and d InGaN in area 2 show dislocation free and their c lattice constants

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