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Table 1 Jsc, Voc, FF, and effective-area PCE comparison of three samples

From: Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar Cells

Jsc (mA/cm2) Voc (V) FF (%) PCE (%)
n-GaN/n-Si (sample A)
5.98 0.25 35 0.52
p-GaN/i-In0.08Ga0.92N/n-GaN/n-Si (sample B)
7.77 0.19 21 0.31
p-GaN/i-In0.11Ga0.89N/n-GaN/n-Si (sample C)
14.96 0.28 30 1.27