Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar Cells

Table 1 J_sc, V_oc, FF, and effective-area PCE comparison of three samples

J_sc (mA/cm²)	V_oc (V)	FF (%)	PCE (%)
n-GaN/n-Si (sample A)
5.98	0.25	35	0.52
p-GaN/i-In_0.08Ga_0.92N/n-GaN/n-Si (sample B)
7.77	0.19	21	0.31
p-GaN/i-In_0.11Ga_0.89N/n-GaN/n-Si (sample C)
14.96	0.28	30	1.27