Fig. 4From: High-Efficiency Silicon Inverted Pyramid-Based Passivated Emitter and Rear Cellsa τeff with respect to the injection level Δn at different annealing temperatures for Al2O3/SiNx passivated wafers. The dashed line denotes one sun injection level. b The FTIR spectra of the samples. c C–V curves for the Au/Al2O3-SiNx/Si structure. d Photoluminescence and electroluminescence photos of devicesBack to article page