Fig. 5From: High-Efficiency Silicon Inverted Pyramid-Based Passivated Emitter and Rear CellsHigh-performance Si IP-based PERC. a The IQE and reflectance of the Si IP-based PREC with different alkaline etching times. b The EQE of the Si IP-based PERC with different alkaline etching time. c The I–V and P-V curve of the Si IP-based PERC with different alkaline etching time. d I–V and P-V curve of the champion deviceBack to article page