Table 1 Nf and Nit at the interface between Al2O3/SiNx stack layers and Si
From: High-Efficiency Silicon Inverted Pyramid-Based Passivated Emitter and Rear Cells
Sample | Nf/cm−2 | Nit/cm−2 eV−1 |
|---|---|---|
As-deposited | − 4.3 × 1011 | 3.89 × 1012 |
300 °C annealing | − 2.26 × 1012 | 8.59 × 1011 |
300 °C annealing and light soaking | − 2.87 × 1012 | 8.68 × 1011 |
800 °C annealing | − 1.04 × 1012 | 4.32 × 1011 |
800 °C annealing and light soaking | − 1.65 × 1012 | 4.65 × 1011 |