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Table 1 Nf and Nit at the interface between Al2O3/SiNx stack layers and Si

From: High-Efficiency Silicon Inverted Pyramid-Based Passivated Emitter and Rear Cells

Sample Nf/cm−2 Nit/cm−2 eV−1
As-deposited − 4.3 × 1011 3.89 × 1012
300 °C annealing − 2.26 × 1012 8.59 × 1011
300 °C annealing and light soaking − 2.87 × 1012 8.68 × 1011
800 °C annealing − 1.04 × 1012 4.32 × 1011
800 °C annealing and light soaking − 1.65 × 1012 4.65 × 1011