a Schematic structure of Ag NP-modified ZnO UV photodetector and the inset is an optical image of fabricated UV photodetector by bending. b I-V characteristics in dark condition and 365 nm UV at 715 mW. c, d The tendency of photocurrent and responsivity with a different incident power and responsivity. e The relationship between normalized detectivity (D*) and the reciprocal of NEP (1/NEP). Liu et al.