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Fig. 6 | Nanoscale Research Letters

Fig. 6

From: Strain and Electric Field Controllable Schottky Barriers and Contact Types in Graphene-MoTe2 van der Waals Heterostructure

Fig. 6

a The schematic diagram of a graphene-MoTe2 heterostructure based transistor. b Band alignment of graphene-MoTe2 heterostructure with respect to vacuum level, where the red cone represents the position of the Dirac point of graphene layer in the heterostructure. CBM and VBM represent conduction band minimum and valence band maximum, respectively. WG-MT and WMT are the work functions of graphene-MoTe2 heterostructure and MoTe2 monolayer, respectively

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