Fig. 2From: Rectifying Performance of Heterojunction Based on α-Borophene Nanoribbons with Edge PassivationThe geometry structures of the proposed three types of model junctions, where a for MnH, b for M’nH, and c for MnN, in which n represents the number of unit cells of the semiconductor part in the central scattering. The large (blue) dashed frame represents the central scattering region in which the small one indicates the unit cellBack to article page