Fig. 3
From: Rectifying Performance of Heterojunction Based on α-Borophene Nanoribbons with Edge Passivation
The I-V characteristics and rectification ratios for the three types of heterojunctions, where a–c correspond to I-V curves for junctions MnH, M ′nH, and MnN (n = 1, 2, 5, 8, 10) within bias range of (− 1,1) V, respectively. The inset in c is the enlarged I-V curves of MnN within the bias range. d–f The rectification ratios calculated correspondingly from the I-V data