Fig. 4From: Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer ThicknessRoom-temperature PL spectra for samples A, B, and C by using a 405 nm GaN semiconductor laser (a) and 325 nm He-Cd laser (b). The peak wavelength is 473.1 nm, 472.9 nm, and 478.2 nm obtained from (a) and 470.5 nm, 470.1 nm, and 475.2 nm obtained from (b) for samples A, B, and C, respectivelyBack to article page