Table 1 Structural parameters of InGaN/GaN MQWs of samples A, B, and C determined by XRD measurements
Sample | Thickness (nm) | In content (%) | |||
---|---|---|---|---|---|
QW | QB | Cap | QW | QB | |
A | 4.0 | 11.1 | 1.0 | 10.8 | 0.00 |
B | 4.0 | 11.0 | 1.8 | 11.9 | 0.00 |
C | 4.0 | 11.0 | 3.0 | 13.6 | 0.00 |
Sample | Thickness (nm) | In content (%) | |||
---|---|---|---|---|---|
QW | QB | Cap | QW | QB | |
A | 4.0 | 11.1 | 1.0 | 10.8 | 0.00 |
B | 4.0 | 11.0 | 1.8 | 11.9 | 0.00 |
C | 4.0 | 11.0 | 3.0 | 13.6 | 0.00 |