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Table 1 Structural parameters of InGaN/GaN MQWs of samples A, B, and C determined by XRD measurements

From: Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness

Sample

Thickness (nm)

In content (%)

QW

QB

Cap

QW

QB

A

4.0

11.1

1.0

10.8

0.00

B

4.0

11.0

1.8

11.9

0.00

C

4.0

11.0

3.0

13.6

0.00

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