Fig. 3From: A Highly Sensitive FET-Type Humidity Sensor with Inkjet-Printed Pt-In2O3 Nanoparticles at Room TemperatureBasic electrical properties of the resistive-type and FET-type Pt-In2O3 sensors at T = 25 °C. a Double sweep I-V curve of the resistive-type sensor. The results of forward and reverse voltage sweeps overlap with each other. b Double sweep DC and pulsed I-V (PIV) curves of the FET-type sensor. The inset indicates the pulse scheme used for PIV measurementBack to article page