Table 2 Performance comparison of different TFETs with DF-TFET (at VGS = VDS = 0.5 V)
From: A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance
Device | ION (μA/μm) | Switching ratio | SSavg (mV/dec) |
|---|---|---|---|
V-TFET [32] | 8 | ~ 107 | 51 |
DS-TFET [33] | 0.01 | 5.3 × 107 | 64 |
SUTFET [6] | 13.5 | 4.4 × 106 | 25 |
TMG TFET [34] | 10 | 3.3 × 108 | 44 |
GS-TFET [35] | 0.1 | 5.9 × 1011 | 40 |
TG-TFET [20] | 0.6 | 6 × 108 | 45 |
DL-TFET [22] | 0.01 | 1.1 × 109 | 51 |
ML-DL-TFET [23] | 0.1 | ~ 1013 | 19 |
DMD-DLTFET [36] | 5 × 10–3 | ~ 109 | 43 |
H-DLTFET [37] | 0.9 | ~ 1014 | 16 mV/de |
This work | 3.8 | 1.4 × 1011 | 18 |