Fig. 12From: Characterization and Fabrication of the CFM-JTE for 4H-SiC Power Device with High-Efficiency Protection and Increased JTE Dose Tolerance WindowBreakdown characteristics of the fabricated 4H-SiC PiN rectifier. a Measured BV of the CFM-JTE, ORA-JTE and TZ-JTE. b Measured BV of the CFM-JTE with different implantation dose. Solid marks are the experimental valuesBack to article page