Table 1 Structure parameters of the CFM-JTE 4H-SiC PiN rectifier
Parameter | Value |
---|---|
N− drift doping | 5 × 1014 cm−3 |
N− epitaxial layer thickness | 100 μm |
N+ substrate doping | 1 × 1018 cm−3 |
P+ layer doping | 1 × 1018 cm−3 |
P++ layer doping | 5 × 1019 cm−3 |
P+ layer thickness | 1 μm |
P+ layer thickness | 0.5 μm |
Mesa depth | 2 μm |
Ring space | 5 μm |
Ring depth | 1 μm |
JTE1 length/JTE2 length | 3:2 |
Dose_JTE1/Dose_JTE2 | 3:2 |