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Table 1 Structure parameters of the CFM-JTE 4H-SiC PiN rectifier

From: Characterization and Fabrication of the CFM-JTE for 4H-SiC Power Device with High-Efficiency Protection and Increased JTE Dose Tolerance Window

Parameter

Value

N drift doping

5 × 1014 cm−3

N epitaxial layer thickness

100 μm

N+ substrate doping

1 × 1018 cm−3

P+ layer doping

1 × 1018 cm−3

P++ layer doping

5 × 1019 cm−3

P+ layer thickness

1 μm

P+ layer thickness

0.5 μm

Mesa depth

2 μm

Ring space

5 μm

Ring depth

1 μm

JTE1 length/JTE2 length

3:2

Dose_JTE1/Dose_JTE2

3:2

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