Characterization and Fabrication of the CFM-JTE for 4H-SiC Power Device with High-Efficiency Protection and Increased JTE Dose Tolerance Window

Table 2 Summary and comparison of characteristics of the recently reported 4H-SiC PiN rectifiers and this work

References	BV (kV)	Thickness (μm)	Active area (mm²)	Current density (A/cm²) @ V_F (V)	V_F (V) @ 100 A/cm²	R_on,sp (mΩ·cm²) @ V_F (V)	Termination length (μm)	Termination efficiency (%)
This work	13.5	100	10	1000 @ 5.2	3.6	3.1 @ 3.6	400	96
[19]	27.5	239	5.75	300 @ 20	16	28 @ 7.6	–	83
[20]	10	150	9	222 @ 5.2	4.8	3 @ 12.5	400	50
[21]	10.2	120	< 0.5	–	–		450	88
[22]	15	147	< 0.5	100 @ 9.7	9.7	62 @ 9.68	500	93
[23]	13	98	–	120 @ 3.3	3.2	1.87 @ 3.2	–	81