Fig. 1From: Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon–Germanium Multilayers Structures for Vertical Transistors Applicationa Schematic diagram of P-doped Si/SiGe/Si MLs. b P-doping concentration of undoped Si/P-doped Si MLs. Ge/Si percentage and P concentration of c undoped Si0.72Ge0.28/P-doped Si, d undoped Si/P-doped Si0.72Ge0.28 MLs. No purging and undoped spacer layer were consideredBack to article page