Fig. 7From: Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon–Germanium Multilayers Structures for Vertical Transistors Applicationa TEM images, b–e EDS mapping of P-doped Si/Si0.86Ge0.14/P-doped Si in Fig. 6a with 11.5-s dry etch. The elements in b is Si, in c is Ge, in d is O, and in e is NBack to article page