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Fig. 8 | Nanoscale Research Letters

Fig. 8

From: Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon–Germanium Multilayers Structures for Vertical Transistors Application

Fig. 8

HRXRD rocking curve around (004) reflection of sample-1, P-doped Si/Si0.86Ge0.14/P-doped Si MLs with 5 nm spacer layer in ad, and sample-2, P-doped Si0.93Ge0.07/Si0.78Ge0.22/P-doped Si0.93Ge0.07 MLs in eh. Both the two samples have four panels: as grown, after vertical etch, SiGe lateral wet etch of HF (6%)/H2O2 (30%)/CH3COOH (99.8%) 20 min, and lateral dry etch of CF4/O2/He 11.5 s

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