Fig. 8

HRXRD rocking curve around (004) reflection of sample-1, P-doped Si/Si_0.86Ge_0.14/P-doped Si MLs with 5 nm spacer layer in a–d, and sample-2, P-doped Si_0.93Ge_0.07/Si_0.78Ge_0.22/P-doped Si_0.93Ge_0.07 MLs in e–h. Both the two samples have four panels: as grown, after vertical etch, SiGe lateral wet etch of HF (6%)/H₂O₂ (30%)/CH₃COOH (99.8%) 20 min, and lateral dry etch of CF₄/O₂/He 11.5 s