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Fig. 9 | Nanoscale Research Letters

Fig. 9

From: Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon–Germanium Multilayers Structures for Vertical Transistors Application

Fig. 9

HRRLMs of P-doped Si/Si0.86Ge0.14/P-doped Si MLs with 5 nm spacer layer (sample-1) in ad, and P-doped Si0.93Ge0.07/Si0.78Ge0.22/P-doped Si0.93Ge0.07 MLs (Sample-2) in eh. The two mappings both have four panels: as grown, after vertical etch, lateral wet etch of HF (6%)/H2O2 (30%)/CH3COOH (99.8%) 20 min, and lateral dry etch of CF4/O2/He 11.5 s

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