Fig. 9

HRRLMs of P-doped Si/Si_0.86Ge_0.14/P-doped Si MLs with 5 nm spacer layer (sample-1) in a–d, and P-doped Si_0.93Ge_0.07/Si_0.78Ge_0.22/P-doped Si_0.93Ge_0.07 MLs (Sample-2) in e–h. The two mappings both have four panels: as grown, after vertical etch, lateral wet etch of HF (6%)/H₂O₂ (30%)/CH₃COOH (99.8%) 20 min, and lateral dry etch of CF₄/O₂/He 11.5 s