Table 2 Comparative study of conventional doping with electrical doping
From: Electrically Doped Nanoscale Devices Using First-Principle Approach: A Comprehensive Survey
Various doped materials features | Conventional doping | Electrical doping | ||||||
|---|---|---|---|---|---|---|---|---|
Chlorine-doped WS2-metal interface [131] | Co-doped ZnO structures joining the Al electrode [132] | Doped armchair graphene nanoribbons [133] | Carbon nanotubes with boron/nitrogen co-doping [52] | Electrically doped pin FET from adenine-based single-wall nanotube [55] | Electrically doped gated diode from single-wall thymine nanotube-like structure [70] | GaAs pin nanodiode [75] | Electrically doped nanobiopin FET [76] | |
Maximum current achieved | Data not given | − 4862 nA | 6.16 × 10−6 A | Data not given | 15.9 µA | 99.3 µA | 1.16 µA | 35.96 nA |
Composite central region length | 5 × 5 WS2 super-cell (inorganic, metal interface) | Inorganic (ZnO) | Organic (graphene nanoribbon) | Organic (carbon nanotube) | Biomolecular, 3.35 nm | Biomolecular, 3.75 nm | Inorganic (GaAs), electrode is 1 nm with a cross section of 0.5 nm × 0.5 nm | Biomolecular, 6.24 nm |
Operating temperature | Room temperature | Room temperature | Room temperature | Room temperature | 300 K | 300 K | 300 K | 300 K |
Force tolerance | 0.001 eV/Å | 0.05 eV/Å | NM | 0.01 eV/ºA | 0.01 eV/Å | 0.01 eV/Å | 0.05 eV/Å | 0.05 eV/Å |
Applied bias (V) | – | − 1 to + 1 | Low | – | 0.02 | 0.0025–0.5 | ± 0.01 | ± 0.01 |
Doping concentration | 2% of total sulfur atoms | 2.5% of total Zn atoms | Satisfactory | B/N pairs: 5% and 10%, respectively | 3.05 × 1018/cm3 | 5.73 × 1018/cm3 | 5.23 × 1019/cm3 | 4 × 1019/cm3 |