Fig. 4From: ZrOx Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behaviora Measured IDS–VGS curves of the 5 nm ZrOx NCFET when VDS = − 0.5 V and VDS = − 0.05 V. b Measured IDS–VDS curves of the ZrOx NCFET and the control MOSFET demonstraing the obvious NDR phenomenon. c Measured IG–VGS curves of the 5 nm ZrOx NCFET when VDS = − 0.5 V and VDS = − 0.05 VBack to article page