Fig. 2
From: Analog Switching and Artificial Synaptic Behavior of Ag/SiOx:Ag/TiOx/p++-Si Memristor Device
I–V characteristics of the Ag/SiOx:Ag/TiOx/p++-Si memristor device. a Bipolar switching behavior b Potentiation or depression by repeating voltage sweeps. The inset shows the voltage and current versus time relation (V-I-t), demonstrating the conductance state during potentiation or depression. c Endurance-cycling performance test at a readout voltage of -0.3 V for 103 cycles of a broader range of bipolar sweeps from 0 to +4.0 V for set and 0 to −4.0 V for reset. d Repeated properties of conductance modulation