Fig. 6From: Analog Switching and Artificial Synaptic Behavior of Ag/SiOx:Ag/TiOx/p++-Si Memristor DeviceCurrent decay and memory retention in Ag/SiOx:Ag/TiOx/p++-Si memristor. a Increase in current after implementation of consecutive 15 potentiating identical pulses. b Current decay is monitored at a reading voltage of +0.3 V after stimulating the device. c The normalized current decay versus time showing the transition from STP to LTP after implementation pulse trains of the number of stimulation. d The memory retention and relaxation time (τ) to pulse numbersBack to article page