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Fig. 8 | Nanoscale Research Letters

Fig. 8

From: Analog Switching and Artificial Synaptic Behavior of Ag/SiOx:Ag/TiOx/p++-Si Memristor Device

Fig. 8

Experimental results for implementation of STDP rule in Ag/SiOx:Ag/TiOx/p++-Si memristor device. a The schematic illustration of implementing electrical programming bias comprising the pair of pulses at amplitudes +1.2 V and −1.2 V fixed with the same width of 5 ms. The approaching time difference between stimulus pulses is Δt ms (t = ±10n, n = 1, 2, …, 10); b The synaptic weight (ΔW) as a function of spike timing (Δt), demonstrating well on the potentiation and depression behaviors in the memristor device

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