Fig. 3From: Effect of Ag Concentration Dispersed in HfOx Thin Films on Threshold SwitchingComparison of TS characteristics in D2 and D3. a TS behavior with an increased OFF current following the EF process. The inset figure shows the EF process in an as-deposited device. b TS behavior without the EF process maintaining a low OFF current and high NLBack to article page