Table 1 Thickness, cation atomic ratio, and roughness of the fabricated devices
From: Effect of Ag Concentration Dispersed in HfOx Thin Films on Threshold Switching
D1 | D2 | D3 | D4 | |
|---|---|---|---|---|
Thickness (nm) | 35.3 | 27.3 | 24 | 18.8 |
Cation ratio (%) | 7 | 16 | 39 | 58 |
RMS roughness (nm) | 0.29 | 1.59 | 2.15 | 3.55 |