Table 2 Recent reported selectors using Ag-filament TS including our devices
From: Effect of Ag Concentration Dispersed in HfOx Thin Films on Threshold Switching
NL | S | |Vth|, |Vhold| | Max. I (Icc) | |
---|---|---|---|---|
D2 (our work) | 40 | 45 | 1–1.2 V, ~ 0.2 V | 10 μA |
D3 (our work) | 8.2 × 106 | 4.2 × 106 | 0.7–0.9 V, ~ 0.2 V | 10 μA |
Ag/a-Si:H/Pt [23] | ~ 106 | ~ 106 | 0.7–0.9 V, 0.4–0.5 V | 10 μA |
Pd/Ag/HfO2/Ag/Pd [18] | ~ 108 | ~ 108 | 0.5 V, 0.1 V | 100 μA |
Pt/MgO:Ag/Pt [14] | ~ 5 × 103 | ~ 5 × 103 | 0.3 V, ~ 0 V | 100 μA |
Pt:SiOxNy:Ag/Pt [14] | ~ 105 | ~ 105 | 0.3 V, ~ 0 V | 100 μA |
Pt/Ag nanodots/HfO2/Pt [22] | ~ 109 | ~ 109 | ~ 0.25 V, ~ 0.05 V | 1 mA |
Ag/TaOx/TaOy/TaOx/Ag [21] | ~ 1010 | ~ 1010 | 0.1–0.18 V, ~ 0 V | 1 mA |