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Table 2 Recent reported selectors using Ag-filament TS including our devices

From: Effect of Ag Concentration Dispersed in HfOx Thin Films on Threshold Switching

 

NL

S

|Vth|,  |Vhold|

Max. I (Icc)

D2 (our work)

40

45

1–1.2 V, ~ 0.2 V

10 μA

D3 (our work)

8.2 × 106

4.2 × 106

0.7–0.9 V, ~ 0.2 V

10 μA

Ag/a-Si:H/Pt [23]

~ 106

~ 106

0.7–0.9 V, 0.4–0.5 V

10 μA

Pd/Ag/HfO2/Ag/Pd [18]

~ 108

~ 108

0.5 V, 0.1 V

100 μA

Pt/MgO:Ag/Pt [14]

~ 5 × 103

~ 5 × 103

0.3 V, ~ 0 V

100 μA

Pt:SiOxNy:Ag/Pt [14]

~ 105

~ 105

0.3 V, ~ 0 V

100 μA

Pt/Ag nanodots/HfO2/Pt [22]

~ 109

~ 109

~ 0.25 V, ~ 0.05 V

1 mA

Ag/TaOx/TaOy/TaOx/Ag [21]

~ 1010

~ 1010

0.1–0.18 V, ~ 0 V

1 mA

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