Fig. 1
From: High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction
a XRD patterns of the β-Ga2O3 film deposited on sapphire substrate (0001) plane, and the peaks of sapphire substrate are marked as asterisks (*). b UV-Vis absorption spectra of the β-Ga2O3 film. c Plots of [α (hν)]2 versus photon energy. d–e TEM and HRTEM images of the β-Ga2O3 film after annealing. f AFM images of the β-Ga2O3 film. g–h Optical and AFM images at the step edge between the film and substrate