Table 1 Comparison of characteristic parameters of other NiO-based and Ga2O3-based UV detectors
From: High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction
Device | Preparation method | Wavelength | Bias voltage | R (AW−1) | Year | Ref. |
|---|---|---|---|---|---|---|
ITO/NiO/β-Ga2O3/Al | RF magnetron sputtering | 245 nm | 10 V | 27.43 | – | This work |
Ni/NiO/ZnO/FTO | RF/DC sputtering | 400 nm | − 5 V | 3.85 | 2015 | [22] |
Al/ZnO/NiO/ITO | Sol-gel/spin-coating | 350 nm | − 1 V | 10.2 | 2014 | [23] |
ZnO/Ga2O3 microwires | CVD | 251 nm | – | 9.7 × 10−3 | 2017 | [12] |
Graphene/β-Ga2O3 | CVD | – | 20 V | 39.3 | 2016 | [11] |
GaN/Sn:Ga2O3 | PLD | 254 nm | – | 3.05 | 2018 | [24] |
Graphene/β-Ga2O3 | Mechanical exfoliation | 254 nm | – | 29.8 | 2018 | [25] |
β-Ga2O3/Nb:SrTiO3 | RF magnetron sputtering | 254 nm | − 10 V | 43.31 | 2017 | [26] |