Effect of the Niobium-Doped Titanium Oxide Thickness and Thermal Oxide Layer for Silicon Quantum Dot Solar Cells as a Dopant-Blocking Layer

Table 1 Characteristics of silicon quantum dot solar cells with or without the thermal oxide interlayer

	J_SC [mA/cm²]	V_OC [V]	FF	Efficiency [%]
With thermal oxide interlayer	0.137	0.502	0.148	0.010
Without thermal oxide interlayer	1.89	0.198	0.340	0.127