Fig. 1
a Angular optical image of the wafer-scale ALD deposited ZnO on Au electrodes with insert—an individual 1-cm2 diced structure. b Experimental and model generated data for variable angle SE measurements of SiO2 deposited on Si wafer. c Graphical scheme of (C2H5)2Zn and H2O precursors, respectively. d SE mapping of the SiO2 thickness in Å. e SE mapping of the thickness of ZnO films in Ångstrom on a 4-in. Si/SiO2 wafer. f Unit cell of wurtzite ZnO with red—O and blue—ZnO atoms (panel a). Atomic arrangement and (0001), (10-10) and (11-20) lattice planes B, C and D, respectively. The outline of the unit cell is shown as a black line. Reprinted from ref. [30] with permission from Elsevier Science