Table 1 Recipe for ALD development of ZnO nanofilms using (C2H5)2Zn and H2O precursors
Parameters | Deposition | |
---|---|---|
1 | 2 | |
Inner heater (°C) | 250 | 250 |
Outer heater (°C) | 250 | 250 |
Zn precursor heater (°C) | 250 | 250 |
Isolate pump | ✔ | ✔ |
Exposure | – | – |
Flow (sccm) | 30 | 30 |
Pulse H2O (Sec) | 0.1 | 0.1 |
Exposure (sec) | 10 | 10 |
Initiate pump | ✔ | ✔ |
Purge H2O (Sec) | 15 | 15 |
Isolate pump | – | – |
Pulse Zn precursor (Sec) | 0.06 | 0.06 |
Exposure | – | – |
Initiate pump | – | – |
Purge Zn precursor (Sec) | 10 | 10 |
Number of cycles | 16 (0.9 nm) | 23 (1.3 nm) |