Fig. 1

a Schematic illustration of the VFET utilizing a graphene channel with Kek-Y lattice distortion and a gate bias, which controls the valley orientation of channel electrons. The source and drain are FM-S graphene, which inject and detect electrons in a specific polarization. Where z₀ is the distance between the graphene layer and the FM stripe. L is the channel length, W is the width of the graphene sample in the y direction, and W≫L. b Band structure near Dirac points. The horizontal line denotes the Fermi energy (color online)