Fig. 2From: Investigating Size-Dependent Conductive Properties on Individual Si NanowiresTop view SEM images of Si NWs with same length of 350 nm, but different diameters of a 350 nm; b 260 nm; and c 190 nm. The dependence of NWs’ diameter on the RIE etching time is plotted in d. e Cross-sectional SEM images of Si NWs with same diameter of 260 nm, but different lengths of 350, 600, 800, and 960 nm. f Presents the dependence of NWs’ length on the MACE timeBack to article page