Fig. 4
From: Investigating Size-Dependent Conductive Properties on Individual Si Nanowires
The topography images of Si NWs with the same length of 350 nm but different diameters of a 350 nm, b 260 nm, c 190 nm. Their corresponding current images obtained under the sample bias of − 1.5 V are given in d, e and f, respectively. Current profiles along the marked lines in d–f are plotted in g, and h presents the averaged current (Iav) over the nanowires as a function of NWs’ diameter. Corresponding lines are added in the topography images of a–c and the profile curves in g are vertically shifted for guidance