Fig. 6
From: Investigating Size-Dependent Conductive Properties on Individual Si Nanowires
Typical I-V curves on the Si NWs with the same length of 350 nm but different diameters (a) and same diameter of 190 nm but different lengths (b). The inset in a shows a typical fitting result of Si NWs with the diameter of 190 nm and length of 350 nm. c and d represent the Schottky barrier heights obtained from the fitting results as a function of NWs’ diameter and length, respectively