Table 1 Schottky barrier height (SBH), ideal factor (n) and series resistance (Rs) obtained from the fitting results of I–V curves obtained on Si NWs with different diameters and lengths
From: Investigating Size-Dependent Conductive Properties on Individual Si Nanowires
Length & Diameter | SBH (meV) | n | Rs (MΩ) | |
|---|---|---|---|---|
L=350 nm | D = 190 nm | 323 | 5.7 | 6.1 |
D = 260 nm | 359 | 6.8 | 9.2 | |
D = 350 nm | 378 | 9.4 | 21.6 | |
L=600 nm | D = 190 nm | 426 | 5.0 | 6.7 |
D = 260 nm | 438 | 7.1 | 31.9 | |
D = 350 nm | 446 | 5.5 | 40.3 | |
L=800 nm | D = 190 nm | 474 | 4.1 | 11.0 |
D = 260 nm | 489 | 9.4 | 36.7 | |
D = 350 nm | 542 | 7.7 | 40.4 | |
L=960 nm | D = 190 nm | 496 | 4.7 | 32.3 |
D = 260 nm | 544 | 6.2 | 181.3 | |
D = 350 nm | 567 | 2.8 | 288.0 | |