Fig. 2From: Stable and Reversible Photoluminescence from GaN Nanowires in Solution Tuning by Ionic ConcentrationSchematic illustration of the effect of ion concentration on photoluminescence intensity. E is energy. Ec, Ev, and εF are conduction band edge, valance band edge, and Fermi level respectively. a Surface depletion region caused by the trapped electrons in the surface states. b Depletion region neutralized by the attachment of positives ions H+ or K+. c Electron transfer to the redox level of H+Back to article page