Fig. 2From: Photoelectronic Properties of End-bonded InAsSb Nanowire Array Detector under Weak LightStructure and electrical properties of the InAsSb NW array device. a Sketch map of the device, with the SEM image shown in the inset. b The energy diagram of the Au-InAsSb interface states. c The temperature-dependent conductance of the device. d I–V curves at 2 K and 300 K without light, respectivelyBack to article page